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| opa237ua/2k5资料 | |
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opa237ua/2k5 |
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file size : 116 kb
manufacturer: description:altered, and at the same time cj and rs will be changed. in general, very low barrier height diodes (with high values of is, suitable for zero bias applications) are realized on p-type silicon. such diodes suffer from higher values of rs than do the n-type. thus, p-type diodes are generally reserved for detector applications (where very high values of rv swamp out high rs) and n-type diodes are used for mixer applications (where high l.o. drive levels keep rv low). |
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| 1pcs | 100pcs | 1k | 10k | ||
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型 号：opa237ua/2k5 厂 家： 封 装：0630 批 号： 数 量：23800 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：林浩/林妮 |
| 电 话：0755-82532799/82532766/83989559 |
| 手 机：13510168121/13725556003 |
| qq：496982847/351622092 |
| msn：linearic@hotmail.com |
| 传 真：0755-82532766 |
| email：maxim_zi@126.com |
| 公司地址： 深圳市福田区佳和大厦b座1802室 门市部：华强广场 q2a114展销柜 |
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