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| lt6233es6-10资料 | |
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lt6233es6-10 |
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file size : 116 kb
manufacturer:linear description:the bh616uv1610 is a high performance, ultra low power cmos static random access memory organized as 1,048,576 by 16 bits and operates in a wide range of 1.65v to 3.6v supply voltage. advanced cmos technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5ma at 1mhz at 3.0v/25oc and maximum access time of 70ns at 1.8v/85oc. easy memory expansion is provided by an active low chip enable (ce1), an active high chip enable (ce2) and active low output enable (oe) and three-state output drivers. the bh616uv1610 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. the bh616uv1610 is made with two chips of 8mbit sram by stacked multi-chip-package. the bh616uv1610 is available in 48-ball bga package. |
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| 1pcs | 100pcs | 1k | 10k | ||
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型 号：lt6233es6-10 厂 家：linear 封 装：0611 批 号：smd/dip 数 量：2775 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：林浩/林妮 |
| 电 话：0755-82532799/82532766/83989559 |
| 手 机：13510168121/13725556003 |
| qq：496982847/351622092 |
| msn：linearic@hotmail.com |
| 传 真：0755-82532766 |
| email：maxim_zi@126.com |
| 公司地址： 深圳市福田区佳和大厦b座1802室 门市部：华强广场 q2a114展销柜 |
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