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op27gs资料
op27gs
 
file size : 116 kb
manufacturer:
description:  the tc55vbm416aftn is a 16,777,216-bit static random access memory (sram) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. fabricated using toshiba's cmos silicon gate process technology, this device operates from a single 2.3 to 3.6 v power supply. advanced circuit technology provides both high speed and low power at an operating current of 3 ma/mhz and a minimum cycle time of 55 ns. it is automatically placed in low-power mode at 0.9 µa standby current (at vdd = 3 v, ta = 25c, typical) when chip enable ( ce1 ) is asserted high or (ce2) is asserted low. there are three control inputs. ce1 and ce2 are used to select the device and for data retention control, and output enable ( oe ) provides fast memory access. data byte control pin ( lb , ub ) provides lower and upper byte access. this device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. and, with a guaranteed operating extreme temperature range of −40 to 85c, the tc55vbm416aftn can be used in environments exhibiting extreme temperature conditions. the tc55vbm416aftn is available in a plastic 48-pin thin-small-outline package (tsop).
 
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价 格  
 
 
型 号:op27gs
厂 家:
封 装:0628
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数 量:6821
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